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四象限探测器

Quadrant photodiodes, QP
四象限探测器
激光光束位置测量
精确调整光学系统
| 6系列:四象限PIN光电二极管 |
| Order # |
Chip |
Package |
Active area |
Gap (µm) |
Dark current |
Capa-citance |
Rise time(ns) |
|
|
|
Size(mm)/Area(mm²) |
(nA) 3.5V |
(nA) 3.5V |
(pf); 10 V |
850 nm, 10V, 50 Ω |
| 501222 |
QP1-6 |
TO52 |
Ø 1.13 / 4x0.25 |
16 |
0.1* |
1 |
20 |
| 501040 |
QP5-6 |
TO5 |
Ø 2.52 / 4x1.25 |
24 |
0.2* |
3 |
20 |
| 501254 |
QP5.8-6 |
TO5 |
2.4x2.4 / 4x1.45 |
50 |
0.4* |
3.5 |
20 |
| 501256 |
QP10-6 |
TO5 |
Ø 3.57 / 4x2.5 |
28 |
0.5* |
5 |
20 |
| 500140 |
QP20-6 |
TO8S |
Ø 5.05 / 4x5 |
34 |
1.0* |
10 |
30 |
| 500732 |
QP50-6 |
TO8S |
Ø 7.8 / 4x12.5 |
18 |
2.0* |
25 |
40 |
| 500142 |
QP50-6 |
TO8S |
Ø 7.8 / 4x12.5 |
42 |
2.0* |
25 |
40 |
| 501416 |
QP50-6 |
TO8S flat |
Ø 7.8 / 4x12.5 |
18 |
2.0* |
25 |
40 |
| 501417 |
QP50-6 |
TO8S flat |
Ø 7.8 / 4x12.5 |
42 |
2.0* |
25 |
40 |
| 501276 |
QP100-6 |
LCC10G |
10x10 / 4x25 |
50 |
4.0* |
50 |
40 |
| 50127601 |
QP100-6 |
LCC10S |
10x10 / 4x25 |
50 |
4.0* |
50 |
40 |
| 7系列:四象限PIN光电二极管 |
| Order # |
Chip |
Package |
Active area |
Dark current |
Capa-citance
|
Rise time(ns) |
|
|
|
Size(mm)/Area(mm²) |
(nA) 10V/150V |
(pf) 10 V/150V |
905 nm, 50 Ω, 10V/150V |
| 501319 |
QP100-7 |
LCC10G |
10×10 / 4×25 |
2* / 10* |
25* / 13* |
50 / 6 |
| Q系列:四象限PIN光电二极管 |
| Order # |
Chip |
Package |
Active area |
Dark current |
Rise time(ns) |
|
|
|
Size(mm)/Area(mm²) |
(nA) 150V |
1064 nm, 180V, 50 Ω |
| 501049 |
QP22-Q |
TO8S |
Ø 5.3 / 4×5.7 |
1.5* |
12 |
| 501048 |
QP45-Q |
TO8S |
6.7×6.7 / 4×10.96 |
8* |
12 |
| 501275 |
QP45-Q |
LCC10G |
6.7×6.7 / 4×10.96 |
8* |
12 |
| 501526 |
QP45-Q |
TO8Si with heater |
6.7×6.7 / 4×10.96 |
8* |
12 |
| 501272 |
QP100-Q |
LCC10G |
10×10 / 4×25 |
6.5* |
12 |
| 500798 |
QP154-Q |
TO1032i |
Ø 14.0 / 4×38.5 |
10* |
12 |
| 50131305 |
QP154-Q |
TO1081i with heater |
Ø 14.0 / 4×38.5 |
10* |
12 |
| 9系列:四象限雪崩光电二极管(QA) |
| Order # |
Chip |
Package |
|
| 501207 |
QA4000-9 |
TO8Si |
QE > 80 % at 760-910 nm |
| 10系列:四象限雪崩光电二极管(QA) |
|
|
| Order # |
Chip |
Package |
|
| 501174 |
QA4000-10 |
TO8Si |
Quadranten Avalanche Photodiode, High QE at 850-1070 nm |
新势力光电
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