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半导体激光器
Product (现货供应)
杭州有现货

Detector Modules
探测器模块


混合模块
8系列:针对高截止频率优化设计(650-850nm波段)
Order # Chip Package Transimpedance [Ohm] Bandwidth [MHz]
50162901 AD230-8 TO5 2750 2000
50162902 AD230-8 TO52 2750 2000
50162903 AD500-8 TO5 2750 1000
50162904 AD500-8 TO52 2750 1300
9系列:近红外敏感增强型(900nm波段)
Order # Chip Package Transimpedance [Ohm] Bandwidth [MHz]
501403 AD500-9-8015 TO52 2750 500
500756 AD230-9 TO5 2750 600
500490 AD500-9 TO5 2750 500
10系列:近红外敏感增强型(1064nm波段)
Order # Chip Package Transimpedance [Ohm] Bandwidth [MHz]
501387 AD800-10 TO8S 10 k 65

开发板模块
Order # Chip Type Package
50156801 16AA0.4-9 APD array PCBA
501101 QP45-Q Quadrant PD HVSD
500741 QP50-6 Quadrant PD SD2
500964 QP50-6 Quadrant PD SD2-DIAG
501102 QP50-6 (18 µm) Quadrant PD SD2
501110 QP50-6 (18 µm) Quadrant PD SD2-DIAG
501104 QP154-Q Quadrant PD HVSD
500788 DL16-7 PSD PCBA3
500744 DL100-7 PSD PCBA3
500819 DL400-7 PSD PCBA
500008 WS7.56 Wavelength sensitive PD 2750
501495 X100-7 with Scintillator Gamma pulse counter Shielded module

完整评估套件
Order # Chip Type
50146502 25AA0.04-9 125 MHz LIDAR APD-array-eval-kit
501476 64AA0.04-9 126 MHz LIDAR APD-array-eval-kit
50159502 AD1100-8 (其它可用) USB-module APD-array-eval-kit
501543 SiPM USB-module SiPM-array-eval-kit

高电压源:最高达500V
Order # Max. Voltage[V] Ripple [mVpp] Descripition Features Footprint [mm]
501385 -500 7.5 High performance HV source Ultra low ripple 45x29
501381 +500 7.5 High performance HV source Ultra low ripple 45x29
50138201 +200 7.5 High performance HV source Ultra low ripple 45x29
501383 +200 <10 Compact HV source Small footprint 35x20
501384 +600 <10 PIN-Photodiode HV source Very small footprint 23x23


Photodiode
光电二极管


安检设备
激光测距
运动控制
分析仪器
生物医疗
光通信
军事
航空航天


驱动电路定制服务



PIN 光电二极管
PIN series Optimized for Special features
Series 6b 350-650 nm Blue/green enhanced
Series 5b 350-650 nm High speed blue-enhanced Epitaxy PIN-diode
Series 5t 500-900 nm High speed red-enhanced Epitaxy PIN-diode
Series 5 500-900 nm High speed NIR-enhanced Epitaxy PIN-diode
Series 6 700-1000 nm General purpose, low dark current, fast response
Series 7 700-1000 nm Low capacitance, full depletable design available
Series Q 900-1100 nm Enhanced NIR sensitivity, low voltage, fully depletable, low capacitance
Series i 900-1700 nm InGaAs photodiode, high IR sensitivity, low dark current

6b系列:蓝绿光敏感型光电二极管
Order # Chip Package Active area Dark current Rise time(ns)



Size(mm)/Area(mm²) (nA) 5V 410 nm.5V.50 Ω
501429 PS1-6b TO52S1 1x1/1 0.05 10
501430 PS1-6b LCC6.1 1x1/1 0.05 10
501297 PC5-6b TO5 ø2.52/5 0.1 20
501242 PS7-6b TO5 2.7x2.7/7 0.15 25
501229 PC10-6b TO5 ø3.57/10 0.2 45
501241 PS13-6b TO5 3.5x3.5/13 0.25 50
501244 PS33-6b TO8 5.7x5.7/33 0.6 140
501258 PS100-6b LCC10S 10x10/100 1 200
501135 PS100-6b CERpinS 10x10/100 1 200
501045 PS100-6b CERpinG 10x10/100 1 200
内置带通滤波器BP的芯片备选
Order # Chip Package Active area(mm²) BP Center(mm) BP Transmission(%) BP FWHM(nm)
501408 PR20-6b TO5i 20 488 70 10
501409 PR20-6b TO5i 20 550 50 10
501284 PR20-6b TO5i 20 633 75 10
501410 PR20-6b TO5i 20 680 50 10

5b系列:蓝光敏感型高速光电二极管
Order # Chip Package Active area Dark current Rise time(ns)



Size(mm)/Area(mm²) (nA) 3.5V 405 nm.3.5V50 Ω
501424 PS1.0-5b TO52S1 1.0x1.0/1 0.01 1.3
501428 PS1.0-5b LCC6.1 1.0x1.0/1 0.01 1.3
501425 PS7-5b TO5 2.7x2.7/1 0.5 5
501426 PC10-5b TO5 ø3.57/10 0.5 6
501427 PS13-5b TO5 3.5x3.5/13 1 6

5t系列:红光敏感型高速光电二极管
Order # Chip Package Active area Dark current Rise time(ns)



Size(mm)/Area(mm²) (nA) 3.5V 850 nm3.5V50 Ω
501126 PS0.25-5t LCC6.1 0.5x0.5/0.25 0.01 0.4
501434 PS0.25-5t SMD1206 0.5x0.5/0.25 0.01 0.4
501125 PC0.55-5t LCC6.1 ø0.84/0.55 0.01 1
501289 PC0.55-5t T13/4 ø0.84/0.55 0.01 1
501290 PC0.55-5t T13/4 black ø0.84/0.55 0.01 1
501127 PS1-5t LCC6.1 1.0x1.0/1 0.01 1

5系列:近红外光敏感型高速光电二极管
Order # Chip Package Active area Dark current Rise time(ns)



Size(mm)/Area(mm²) (nA) 3.5V 405 nm3.5V50 Ω
500122 PS0.25-5 TO52S1 0.5x0.5/0.25 0.1 0.4
500119 PS0.25-5 TO52S3 0.5x0.5/0.25 0.1 0.4
500973 PS0.25-5 LCC6.1 0.5x0.5/0.25 0.1 0.4
500116 PS0.25-5 SMD1206 0.5x0.5/0.25 0.1 0.4
501257 PC0.55-5 TO5251 ø0.84/0.55 0.2 1
501124 PC0.55-5 LCC6.1 ø0.84/0.55 0.2 1
500127 PS1.0-5 TO52S1 1.0x1.0/1 0.2 1.5
500128 PS1.0-5 TO52S3 1.0x1.0/1 0.2 1.5
501128 PS1.0-5 LCC6.1 1.0x1.0/1 0.2 1.5
501291 PS7-5 TO5 2.7x2.7/7 0.5 11
501218 PS11.9-5 TO5 3.45x3.45/11.9 1 3
500097 PC20-5 TO8 ø5.05/20 2 3.5
501292 PS33-5 TO8 5.7x5.7/33 2 3.5
501011 PS100-5 LCC10S 10x10/100 2 5
501433 PS100-5 CERpinG 10x10/100 2 5

6系列:具有超低暗电流的红外光电二极管
Order # Chip Package Active area Dark current Rise time(ns)



Size(mm)/Area(mm²) (nA) 3.5V 850 nm10V50 Ω
500151 PC1-6 TO52S1 ø1.13/1 0.05 10
500482 PC1-6 TO52S3 ø1.13/1 0.05 10
501214 PC5-6 TO5 ø2.52/5 0.1 13
501221 PS7-6 TO5 2.66x2.66/7 0.1 15
501193 PC10-6 TO5 ø3.57/10 0.2 20
501246 PS13-6 TO5 3.5x3.5/13 0.2 20
500113 PC20-6 TO8 ø5.05/20 0.3 25
501298 PS33-6 TO8 5.7x5.7/33 0.4 25
500103 PC50-6 TO8S ø7.98/50 0.5 30
500082 PC100-6 BNC ø11.28/100 1 40
501264 PS100-6 BNC 10x10/100 1 40
501435 PS100-6 LCC10S 10x10/100 1 40
500149 PS100-6 CERpinG 10x10/100 1 40

7系列:全耗尽型红外光电二极管
Order # Chip Package Active area Dark current Capa-citance
Rise time(ns)



Size(mm)/Area(mm²) (nA) 10V/150V (pf) 10 V/150V 905 nm 50 Ω 10V/150V
501285 PC5-7 TO8i Ø 2.52 / 5 0.05 / 0.25 6 / 2.5 45 / 6
501286 PC10-7 TO8i Ø 3.57 / 10 0.1 / 0.5 12 / 4.5 50 / 6
501287 PC10-7 TO8Si Ø 5.05 / 20 0.2 / 1 20/8 50 / 6
501317 PS100-7 LCC10G 10×10 / 100 1.5 / 10 90 / 32 50 / 6

Q系列:1064nm波段光电二极管
Order # Chip Package Active area Dark current Rise time(ns)



Size(mm)/Area(mm²) (nA) 150V 1064 nm150V,50 Ω
501446 PC10-Q TO8i Ø 3.57 / 10 5 14
501447 PC20-Q TO8Si Ø 5.05 / 20 15 14
501448 PC50-Q TO8Si Ø 8 / 50 40 14
501273 PS100-Q LCC10G 10×10 / 100 80 14

i系列:InGaAs铟镓砷探测器(波长范围900-1700nm)
Order # Chip Package Active area Spectra lResponse(A/W) Dark current Capacitance



Size(mm)/Area(mm²) at 650 nm / 1550 nm (nA)at 5V (pf) at 5V
501201 PC0.7-i LCC6.1 1.0 / 0.7 0.05 / 0.95 2 70
201203 PC0.7-i TO52S1 1.0 / 0.7 0.05 / 0.95 2 70
501202 PC0.7-ix LCC6.1 1.0 / 0.7 0.3 / 0.95 2 70
501204 PC0.7-ix TO52S1 1.0 / 0.7 0.3 / 0.95 2 70
501251 PC2.6-i TO5i 2.0 / 2.6 0.05 / 0.95 10 250
501266 PC7.1-i TO5i 3.0 / 7.1 0.05 / 0.95 25 700


Avalanche photodiodes
APD雪崩二极管


安检设备
激光测距
运动控制
分析仪器
生物医疗
光通信
军事
航空航天


驱动电路定制服务



雪崩光电二极管(APD)
APD series Optimized for Special features
Series 11 350-550nm Blue enhanced,high speed
Series 12 550-750nm Ultra-low temperature coefficient,flat frequency response up to 3 GHz
Series 8r 620-750nm Optimized for 650 nm,fast rise time,low capacitance,flat gain curve
Series 8 750-820nm High speed,low temperature coefficient,high gain bandwidth product
Series 9 750-930nm Fast rise time at higher NIR sensitivity,high gain
Series 9.5 800-950nm Excellent responsivity in 950 nm range,fast rise time,low dark current
Series 10 900-1100nm Sensitivity at 1064 nm close to physical limits

11系列:蓝光敏感增强型
Order # Chip Package Active area Dark current Breakdown Rise time (ns)



Size(mm)/Area(mm²) (nA)at 5V voltage M = 100, 410 nm, 50 Ω
500146 AD800-11 TO52 Ø 0.8 / 0.5 1 160 - 240* 1
500967 AD1900-11 TO5i Ø 1.95 / 3 5 90 - 240* 2

12系列:红光敏感增强型
Order # Chip Package Active area Spectra lResponse(A/W) Capacitance Cut-off frequency (GHz)



Size(mm)/Area(mm²) 660 nm M=100 (pf)M=100 660 nm, 50 Ω
501828 AD100-12 LCC6.1 Ø 0.1 / 0.008 50 typ. 0.5 typ. 3, min. 2
501831 AD100-12 TO52S1 Ø 0.1 / 0.008 50 typ. 0.5 typ. 3, min. 2
501157 AD230-12 LCC6.1 Ø 0.23 / 0.042 50 typ. 1.5 typ. 3, min. 2
501162 AD230-12 TO52S1 Ø 0.23 / 0.042 50 typ. 1.5 typ. 3, min. 2
501155 AD500-12 LCC6.1 Ø 0.5 / 0.196 50 typ. 4.5 typ. 3, min. 2
501163 AD500-12 TO52S1 Ø 0.5 / 0.196 50 typ. 4.5 typ. 3, min. 2
内置带通(BP)滤波器的芯片备选
Order # Chip Package Active Area (mm) BP Zentrum (nm) BP transmission (%) BP FWHM (nm)
501829 AD100-12 LCC6.1f Ø 0.1 635 >90 55
501830 AD100-12 LCC6.1f Ø 0.1 635 >85 65
501156 AD230-12 LCC6.1f Ø 0.23 635 >90 55
501820 AD230-12 LCC6.1f Ø 0.23 635 >85 65
501154 AD500-12 LCC6.1f Ø 0.5 635 >90 55
501819 AD500-12 LCC6.1f Ø 0.5 635 >85 65

8r系列:红/绿敏感增强型(650nm波段)
Order # Chip Package Active area Dark current Breakdown Rise time (ns)



Size(mm)/Area(mm²) (nA) M=100 voltage(V) M = 100, 650 nm, 50 Ω
501487 AD230-8r TO52S1.1 Ø 0.23 / 0.04 0.2 80-160* 0.180
501488 AD230-8r LCC6.1 Ø 0.23 / 0.04 0.2 80-160* 0.180

8系列:针对高截止频率进行优化设计(650-850nm波段)
Order # Chip Package Active area Dark current Breakdown Rise time (ns)



Size(mm)/Area(mm²) (nA) M=100 voltage(V) M = 100, 905 nm, 50 Ω
501810 AD100-8 LCC6.1 Ø 0.1 / 0.008 0.05 80–160* <0.180
500011 AD100-8 TO52S1 Ø 0.1 / 0.008 0.05 80–160* <0.180
501171 AD100-8 TO52S3 Ø 0.1 / 0.008 0.05 80–160* <0.180
501078 AD230-8 LCC6.1 Ø 0.23 / 0.04 0.3 80–160* 0.18
500019 AD230-8 TO5251 Ø 0.23 / 0.04 0.3 80–160* 0.18
500022 AD230-8 TO52S3 Ø 0.23 / 0.04 0.3 80–160* 0.18
501496 AD230-8 ODFN2x2 Ø 0.23 / 0.04 0.3 80–160* 0.18
501077 AD500-8 LCC6.1 Ø 0.5 / 0.2 0.5 80–160* 0.35
500030 AD500-8 LCC6.1 Ø 0.5 / 0.2 0.5 80–160* 0.35
500305 AD500-8 TO52S2 (lens) Ø 0.5 / 0.2 0.5 80–160* 0.35
500155 AD500-8 TO52S3 Ø 0.5 / 0.2 0.5 80–160* 0.35
500947 AD800-8 TO52S1 Ø 0.8 / 0.5 2 80–240* 0.7
501117 AD1100-8 TO52S1 Ø 1.13 / 1 4–6 80–240* 1
500015 AD1900-8 TO5i Ø 1.95 / 3 15 80–200* 1.4
501194 AD3000-8 TO5i Ø 3 / 7.07 30 80–200* 2
500160 AD5000-8 TO8i Ø 5 / 19.63 60 80–200* 3
内置带通(BP)滤波器的芯片备选
Order # Chip Package Active Area (mm) BP (nm) BP transmission (%) BP FWHM (nm)
501811 AD100-8 LCC6.1f Ø 0.1 635 >90 55
501812 AD100-8 LCC6.1f Ø 0.1 655 >85 65
501079 AD230-8 LCC6.1f Ø 0.23 635 >90 55
501805 AD230-8 LCC6.1f Ø 0.23 655 >85 65
501076 AD500-8 LCC6.1f Ø 0.5 635 >90 55
501809 AD500-8 LCC6.1f Ø 0.5 655 >85 65

9系列:近红外敏感增强型(900nm波段)
Order # Chip Package Active area Dark current Breakdown Rise time (ns)



Size(mm)/Area(mm²) (nA) M=100 voltage(V) M=100, 905 nm, 50 Ω
500020 AD230-9 TO52S1 Ø 0.23 / 0.04 0.5 160–240* 0.5
500023 AD230-9 TO52S3 Ø 0.23 / 0.04 0.5 160–240* 0.5
501123 AD230-9 LCC6.1 Ø 0.23 / 0.04 0.5 160–240* 0.5
501557 AD230-9 ODFN2x2 Ø 0.23 / 0.04 0.5 160–240* 0.5
500031 AD500-9 TO5251 Ø 0.5 / 0.2 0.8 160–240* 0.55
500306 AD500-9 TO52S2 Ø 0.5 / 0.2 0.8 160–240* 0.55
500156 AD500-9 TO52S3 Ø 0.5 / 0.2 0.8 160–240* 0.55
501122 AD500-9 LCC6.1 Ø 0.5 / 0.2 0.8 160–240* 0.55
501196 AD800-9 TO52S1 Ø 0.8 / 0.5 2 160–240* 0.9
501197 AD1100-9 TO52S1 Ø 1.13 / 1 4 160–240* 1.3
501208 AD1500-9 TO5i Ø 1.5 / 1.77 2 160–240* 2
501198 AD3000-9 TO5i Ø 3 / 7.07 30 160–240* 2
50016101 AD5000-9 TO5i Ø 5 / 19.63 60 160–240* 3
内置带通(BP)滤波器的芯片备选
Order # Chip Package Active Area (mm) BP Center (nm) BP transmission (%) BP FWHM (nm)
501265 AD230-9 TO52S1F2 Ø 0.23 905 >90 45
501817 AD230-9 LCC6.1f Ø 0.23 905 >90 45
500590 AD500-9 TO52S1F2 Ø 0.5 905 >90 45
501818 AD500-9 LCC6.1f Ø 0.5 905 >90 45

9系列:多元阵列
Order # Chip Package


501099 8AA0.4-9 SOJ22GL 8 elements, QE > 80 % at 760-910 nm with NTC
501098 16AA0.13-9 SOJ22GL 16 elements, QE > 80% at 760-910 nm with NTC
500038 16AA0.13-9 DIL18 16 elements, QE > 80 % at 760-910 nm
501097 16AA0.4-9 SOJ22GL 16 elements, QE > 80 % at 760-910 nm
50130802 25AA0.04-9 BGA 25 (5x5) elements, QE >80 % at 760-910nm with PTC
50130702 64AA0.04-9 BGA 64 (8x8) elements, QE > 80 % at 760-910 nm with PTC

9.5系列:近红外敏感增强型(950nm波段)
Order # Chip Package Active area Dark current Breakdown Rise time (ns)



Size(mm)/Area(mm²) (nA) M=100 voltage(V) M=100, 905 nm, 50 Ω
501325 AD500-9.5 LCC6.1 Ø 0.5 / 0.2 0.5 260–340* 1.6

10系列:近红外敏感增强型(1064nm波段)
Order # Chip Package Active area Dark current Breakdown



Size(mm)/Area(mm²) (nA) M= Vop voltage(V)
500953 AD500-10 TO5i Ø 0.5 / 0.2 1.5 220-600*
501233 AD800-10 TO5i Ø 0.8 / 0.5 3 220-600*
500883 AD1500-10 TO5i Ø 1.5 / 1.77 7 220-600*
50123401 AD4000-10 TO8Si Ø 4 / 12.56 50 220-600*


PIN Array, APD Array
探测器阵列


激光雷达
激光测距


PIN光电二极管阵列
Order # Chip Package Elements Pitch Active Area Dark current Capacitance Scintillator




(mm) Size (mm)/Area (mm²) at 10 mV (pA) at 0 V (pF)
50146101 16XA1.9-B DIL18 full 16 1.275 0.9 x 2.15 / 1.94 5 250 optional
50146102 16XA1.9-B DIL18 slim 16 1.275 0.9 x 2.15 / 1.94 5 250 optional
50146201 16XA2.6-A DIL18 full 16 1.575 1.2 x 2.15 / 2.58 5 135 optional
50146202 16XA2.6-A DIL18 slim 16 1.575 1.2 x 2.15 / 2.58 5 135 optional
50146301 16XA5.2-A DIL18 full 16 2.525 2.15 x 2.4 / 5.16 7.5 240 optional
50146302 16XA5.2-A DIL18 slim 16 2.525 2.15 x 2.4 / 5.16 7.5 240 optional

9系列:APD雪崩二极管阵列
Order # Chip Package


501099 8AA0.4-9 SOJ22GL 8 elements, QE > 80 % at 760-910 nm with NTC
501098 16AA0.13-9 SOJ22GL 16 elements, QE > 80% at 760-910 nm with NTC
500038 16AA0.13-9 DIL18 16 elements, QE > 80 % at 760-910 nm
501097 16AA0.4-9 SOJ22GL 16 elements, QE > 80 % at 760-910 nm
50130802 25AA0.04-9 BGA 25 (5x5) elements, QE >80 % at 760-910nm with PTC
50130702 64AA0.04-9 BGA 64 (8x8) elements, QE > 80 % at 760-910 nm with PTC


Quadrant photodiodes, QP
四象限探测器


激光光束位置测量
精确调整光学系统


6系列:四象限PIN光电二极管
Order # Chip Package Active area Gap (µm) Dark current Capa-citance Rise time(ns)



Size(mm)/Area(mm²) (nA) 3.5V (nA) 3.5V (pf); 10 V 850 nm, 10V, 50 Ω
501222 QP1-6 TO52 Ø 1.13 / 4x0.25 16 0.1* 1 20
501040 QP5-6 TO5 Ø 2.52 / 4x1.25 24 0.2* 3 20
501254 QP5.8-6 TO5 2.4x2.4 / 4x1.45 50 0.4* 3.5 20
501256 QP10-6 TO5 Ø 3.57 / 4x2.5 28 0.5* 5 20
500140 QP20-6 TO8S Ø 5.05 / 4x5 34 1.0* 10 30
500732 QP50-6 TO8S Ø 7.8 / 4x12.5 18 2.0* 25 40
500142 QP50-6 TO8S Ø 7.8 / 4x12.5 42 2.0* 25 40
501416 QP50-6 TO8S flat Ø 7.8 / 4x12.5 18 2.0* 25 40
501417 QP50-6 TO8S flat Ø 7.8 / 4x12.5 42 2.0* 25 40
501276 QP100-6 LCC10G 10x10 / 4x25 50 4.0* 50 40
50127601 QP100-6 LCC10S 10x10 / 4x25 50 4.0* 50 40

7系列:四象限PIN光电二极管
Order # Chip Package Active area Dark current Capa-citance
Rise time(ns)



Size(mm)/Area(mm²) (nA) 10V/150V (pf) 10 V/150V 905 nm, 50 Ω, 10V/150V
501319 QP100-7 LCC10G 10×10 / 4×25 2* / 10* 25* / 13* 50 / 6

Q系列:四象限PIN光电二极管
Order # Chip Package Active area Dark current Rise time(ns)



Size(mm)/Area(mm²) (nA) 150V 1064 nm, 180V, 50 Ω
501049 QP22-Q TO8S Ø 5.3 / 4×5.7 1.5* 12
501048 QP45-Q TO8S 6.7×6.7 / 4×10.96 8* 12
501275 QP45-Q LCC10G 6.7×6.7 / 4×10.96 8* 12
501526 QP45-Q TO8Si with heater 6.7×6.7 / 4×10.96 8* 12
501272 QP100-Q LCC10G 10×10 / 4×25 6.5* 12
500798 QP154-Q TO1032i Ø 14.0 / 4×38.5 10* 12
50131305 QP154-Q TO1081i with heater Ø 14.0 / 4×38.5 10* 12

9系列:四象限雪崩光电二极管(QA)
Order # Chip Package
501207 QA4000-9 TO8Si QE > 80 % at 760-910 nm

10系列:四象限雪崩光电二极管(QA)

Order # Chip Package
501174 QA4000-10 TO8Si Quadranten Avalanche Photodiode, High QE at 850-1070 nm


Position Sensitive Detector, PSD
位敏探测器


依据横向光电效应(电压和电流信号随着光斑位置变化而变换的现象)
位置探测



位敏二极管(PSD)
APD series Optimized for Special features
Series 6 700-1000nm General purpo se,low dark current,fast response
Series 7 700-1000nm Low capacitance,full depletable design available

PSD: 具有高分辨率的位敏二极管
Order # Chip Package Dimension Active area Rise time (ns) Interelectrode




Size(mm)/Area(mm²) M =100, 20 V, 50 Ω Resistance
500588 OD3.5-6 SO8 single 3.5×1 / 3.5 200 50 ± 20
501278 OD6-6 SO16 single 6×1 / 6 200 85 ± 20
501115 OD6-6 SMD single 6×1 / 6 200 85 ± 20
500062 DL16-7 CERpin dual axis 4×4 / 16 500 10
500162 DL16-7 CERsmd dual axis 4×4 / 16 500 10
501020 DL16-7 LCC10G dual axis 4×4 / 16 500 10
500054 DL100-7 CERpin dual axis 10×10 / 100 4000 12
500056 DL100-7 CERsmd dual axis 10×10 / 100 4000